The head of Samsung’s semiconductor system acknowledged recently that the business’s existing mass production, leading-edge procedure innovations are a number of years behind TSMC’s most innovative production nodes. However Samsung is striving to overtake its bigger competitor in 5 years.
” To be sincere, Samsung Electronic devices’ foundry innovation drags TSMC,” stated Dr. Kye Hyun Kyung, the head of the Samsung Electronic Devices Gadget Solutions Department, managing international operations of the Memory, System LSI and Foundry service systems,” at a lecture at the Korea Advanced Institute of Science & & Innovation (KAIST), reports Hankyung ” We can outshine TSMC within 5 years.”
Samsung has actually been investing 10s of billions of dollars in its foundry department in the current years in a quote to overtake TSMC and Intel, both in regards to production capability for LSI chips in addition to procedure innovation benefits. The business has actually substantially closed the space with its competitors, however it is still not rather on par with TSMC’s fabrication innovations when it concerns efficiency, power, location (transistor density), and expense metrics.
While Samsung Foundry is the very first agreement maker of chips to embrace gate-all-around (GAA) transistors with its SF3E (3GAE, 3 nm, gate-all-around early) node, and the business’s consumers are passionate about the innovation itself and the unique transistor architecture, this procedure is not utilized for Samsung’s own leading-edge system-on-chips for mobile phones.
” Consumers’ reaction to Samsung Electronic devices’ 3nm GAA procedure is excellent,” stated Dr. Kye Hyun Kyung.
On the other hand, Samsung’s newest Galaxy S23-series utilizes Qualcomm’s Snapdragon 8 Gen 2 SoC is made by TSMC on its N4 fabrication procedure.
Samsung Foundry’s most innovative innovation that can be utilized to make highly-complex SoCs for mobile phones or other requiring applications is SF4 (4LPP, 4 nm, low-power plus), which, as the business confesses, is substantially behind TSMC’s N3 (N3B) node, is reported to be utilized for mass production of Apple’s highly-complex SoCs at this time.
The business might rather close the space with TSMC’s N3 and N4P with its SF4P (4LPP+) that will be offered for consumers later on this year, according to an information released by @Tech_Reve
Samsung Foundry will have a much better opportunity to overtake TSMC when its SF3 (3GAP) fabrication node goes into high volume production in 2024, however by the time TSMC will likewise be providing its advanced N3P production innovation. Around the exact same time Samsung likewise prepares to use SF4X (4HPC), a 4 nm-class fabrication innovation that will (as the name recommends) address high-performance CPUs and GPUs.
Samsung supposedly thinks that shift to GAA transistors in the 2022 ~ 2023 timeframe makes an excellent sense given that it will have time to repair teething issues of the brand-new architecture ahead of its competitors, most significantly Intel and TSMC. As an outcome, when they begin fabbing chips on their 2 nm-class innovations (20A, N2) in 2024– 2025 and perhaps experience the exact same problems that Samsung is fixing today, its SF2 node will have the ability to use a much better mix of power, efficiency, transistor density, expenses, and yields.